MJD112

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 2A; HFE Min: 1000; HFE Max: 12000; VCE (V): 3V; IC (mA): 2000mA; VCE(SAT) (V): 3V; IC (mA)1: 4000mA; IB (mA): 40mA; FT Min (MHz): 25 MHz; PTM Max (W): 1.5W; Package: TO-251/252; package_code: TO-251/252; mfr_package_code: TO-251/252