Galaxy Microelectronics
MMBD4448HCDW
Surface Mount Small Signal Switching Diode; Configuration: Two duals,Common Cathode; VRRM Max (V): 80; IAV Max (A): 0.25; VFM Max (V): 1.25; @ IF (A): 0.15; IR Max (UA): 2.5; @VR (V): 75; TRR Max (NS): 4; Pin: F17; Package: SOT-363
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Technical Specifications
Galaxy Microelectronics MMBD4448HCDW technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 80 |
| Power Dissipation-Max | 0.2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics MMBD4448HCDW Datasheet
Download the complete datasheet for Galaxy Microelectronics MMBD4448HCDW to view detailed technical specifications.
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