The MMBD4448HSDW is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a dual terminal position and has a maximum reverse voltage of 80 volts. The diode is constructed with a silicon material and has a maximum power dissipation of 0.2 watts. It is available in a 6-pin dual package.
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Galaxy Microelectronics MMBD4448HSDW technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 80 |
| Power Dissipation-Max | 0.2 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
