The MMBD4448HTW is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a maximum reverse voltage of 80 volts and a maximum power dissipation of 0.2 watts. The diode is available in a 6-terminal package type R-PDSO-F6 and is suitable for general purpose rectification applications.
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Galaxy Microelectronics MMBD4448HTW technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 3 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 80 |
| Power Dissipation-Max | 0.2 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
