Galaxy Microelectronics
SMAJ12
Surface Mount TVS Diode; Direction: Unidirectional; V(BR) Typ (V): 13.3V; PPK Max (W): 400W; Condition: 10×1000us; VRWM Max (V): 12V; VBR Min (V): 13.3V; VBR Max (V): 16.3V; IR Max (uA): 5uA; VC Max (V): 22V; Package: SMA
Surface Mount TVS Diode; Direction: Unidirectional; V(BR) Typ (V): 13.3V; PPK Max (W): 400W; Condition: 10×1000us; VRWM Max (V): 12V; VBR Min (V): 13.3V; VBR Max (V): 16.3V; IR Max (uA): 5uA; VC Max (V): 22V; Package: SMA
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMAJ12 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 22 |
| Breakdown Voltage-Nom | 14.8 |
| Breakdown Voltage-Max | 16.3 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SMAJ12 Datasheet
Download the complete datasheet for Galaxy Microelectronics SMAJ12 to view detailed technical specifications.
No datasheet is available for this part.