Bidirectional surface mount transient voltage suppressor diode designed for overvoltage protection. Features a repetitive peak reverse voltage of 33V and a maximum working reverse voltage of 7.5V. Offers a typical breakdown voltage of 36.7V, with a minimum of 8.33V and a maximum of 40.6V. Peak pulse power dissipation is 400W for a 10x1000us waveform, with a maximum clamping voltage of 14.3V. Operates across a temperature range of -55°C to 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMAJ33CA technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
33
Breakdown Voltage-Min
36.7
Non-rep Peak Rev Power Dis-Max
400
Clamping Voltage-Max
53.3
Breakdown Voltage-Nom
38.65
Breakdown Voltage-Max
40.6
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics SMAJ33CA Datasheet
Download the complete datasheet for Galaxy Microelectronics SMAJ33CA to view detailed technical specifications.
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