Bidirectional surface mount transient voltage suppressor diode designed for overvoltage protection. Features a repetitive peak reverse voltage of 33V and a maximum working reverse voltage of 7.5V. Offers a typical breakdown voltage of 36.7V, with a minimum of 8.33V and a maximum of 40.6V. Peak pulse power dissipation is 400W for a 10x1000us waveform, with a maximum clamping voltage of 14.3V. Operates across a temperature range of -55°C to 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMAJ33CA technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SMAJ33CA Datasheet
Download the complete datasheet for Galaxy Microelectronics SMAJ33CA to view detailed technical specifications.
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