Bidirectional surface mount transient voltage suppressor diode designed for circuit protection. Features a repetitive peak reverse voltage of 51V and a maximum working reverse voltage of 85V. Offers a typical breakdown voltage of 56.7V, with a minimum of 56.7V and a maximum of 62.7V. Handles a peak pulse power of 400W (10x1000µs) with a maximum clamping voltage of 82.4V. Operates across a temperature range of -55°C to 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMAJ51CA technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
51
Breakdown Voltage-Min
56.7
Non-rep Peak Rev Power Dis-Max
400
Clamping Voltage-Max
82.4
Breakdown Voltage-Nom
59.7
Breakdown Voltage-Max
62.7
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics SMAJ51CA Datasheet
Download the complete datasheet for Galaxy Microelectronics SMAJ51CA to view detailed technical specifications.
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