Bidirectional surface mount transient voltage suppressor diode designed for circuit protection. Features a repetitive peak reverse voltage of 51V and a maximum working reverse voltage of 85V. Offers a typical breakdown voltage of 56.7V, with a minimum of 56.7V and a maximum of 62.7V. Handles a peak pulse power of 400W (10x1000µs) with a maximum clamping voltage of 82.4V. Operates across a temperature range of -55°C to 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMAJ51CA technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 51 |
| Breakdown Voltage-Min | 56.7 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 82.4 |
| Breakdown Voltage-Nom | 59.7 |
| Breakdown Voltage-Max | 62.7 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SMAJ51CA Datasheet
Download the complete datasheet for Galaxy Microelectronics SMAJ51CA to view detailed technical specifications.
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