Unidirectional surface mount transient voltage suppressor diode designed for circuit protection. Features a 12V repetitive peak reverse voltage and a 600W peak pulse power dissipation (10x1000us waveform). Offers a typical breakdown voltage of 13.3V, with a minimum of 8.89V and a maximum of 14.7V. Maximum clamping voltage is 19.9V, with a maximum leakage current of 50uA. Housed in an SMB package (DO-214AA) with two terminals, suitable for operating temperatures from -55°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMBJ12A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SMBJ12A Datasheet
Download the complete datasheet for Galaxy Microelectronics SMBJ12A to view detailed technical specifications.
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