Surface mount unidirectional transient voltage suppressor diode designed for overvoltage protection. Features a repetitive peak reverse voltage of 150V and a breakdown voltage range from 167V to 185V, with a typical breakdown voltage of 167V. Offers a maximum peak pulse power dissipation of 1500W for a 10x1000µs waveform. Maximum clamping voltage is 243V, with a maximum leakage current of 5µA at 150V. Operates across a temperature range of -55°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Microelectronics SMCJ150A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
150
Breakdown Voltage-Min
167
Non-rep Peak Rev Power Dis-Max
1500
Clamping Voltage-Max
243
Breakdown Voltage-Nom
176
Breakdown Voltage-Max
185
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Galaxy Microelectronics SMCJ150A Datasheet
Download the complete datasheet for Galaxy Microelectronics SMCJ150A to view detailed technical specifications.
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