Single Schottky barrier rectifier diode with a maximum repetitive peak reverse voltage (VRRM) of 100V and a maximum average forward current (IAV) of 2A. Features a maximum forward voltage drop (VFM) of 0.85V at 2A forward current and a maximum peak surge forward current (IFSM) of 50A. Exhibits a maximum reverse current (IR) of 250µA at 100V reverse voltage. Operates within a temperature range of -55°C to 150°C and is housed in an SMA package with two terminals.
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Technical Specifications
Galaxy Microelectronics SS210A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Microelectronics SS210A Datasheet
Download the complete datasheet for Galaxy Microelectronics SS210A to view detailed technical specifications.
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