TPA; IPP 10/1000 mS (A): 50; IPP 8/20 mS (A): 100; IFSM (A): 30; IRM (mA): 2; VRM (V): 180; VBR min (V): 200; @IR (mA): 1; VBO min (V): 267; IBO max (mA): 800; IH min (MA): 150; CJ TYP (pF): 100; Package: DO-15
Galaxy Microelectronics TPA200 technical specifications.
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Galaxy Microelectronics TPA200 to view detailed technical specifications.
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