NPN Bipolar Junction Transistor (BJT) for through-hole, chassis mount applications. Features a 60V collector-emitter voltage (VCEO) and 15A maximum collector current. Offers a 3MHz gain bandwidth product and 115W power dissipation. Operates within a temperature range of -65°C to 200°C. Packaged in a TO-3 case.
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Stmicroelectronics 2N3055 technical specifications.
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Current | 15A |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 3MHz |
| Height | 8.7mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 39.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 15A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole, Chassis Mount |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 115W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Voltage | 60V |
| DC Rated Voltage | 60V |
| Width | 26.2mm |
| RoHS | Compliant |
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