N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter breakdown voltage and 460A continuous collector current. This IGBT module offers a low collector-emitter saturation voltage of 2.15V and a maximum power dissipation of 1.6kW. Designed for chassis mounting with screw terminals, it includes an integrated NTC thermistor for temperature monitoring. Operating within a temperature range of -40°C to 150°C, this RoHS compliant component has a turn-on delay of 200ns and a turn-off delay of 500ns.
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Infineon FF300R12KE4HOSA1 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.15V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 460A |
| Halogen Free | Not Halogen Free |
| Height | 31.4mm |
| Input | Standard |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Collector Current | 460A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.6kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.6kW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 500ns |
| Turn-On Delay Time | 200ns |
| RoHS | Compliant |
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