PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 32V. Offers a minimum DC current gain (hFE) of 215 and a collector-emitter saturation voltage of -300mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 350mW.
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi BCW30 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.97mm |
| hFE Min | 215 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Series | BCW30 |
| DC Rated Voltage | -32V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi BCW30 Datasheet
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