PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 600mA. Offers a minimum DC current gain (hFE) of 75 and a transition frequency (fT) of 200MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
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Onsemi MMBT2907ALT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | -60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 0.94mm |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Type | General Purpose |
| DC Rated Voltage | -60V |
| Width | 1.3mm |
| RoHS | Compliant |
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