NPN Bipolar Junction Transistor (BJT) for switching applications. Features a 15V collector-emitter breakdown voltage and a 300mA maximum collector current. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
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Onsemi MMBT3646 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 300A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.93mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 300mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
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