RF MOSFET N-CHANNEL transistor featuring 125V drain-to-source breakdown voltage and 40A continuous drain current. Operates at frequencies up to 250MHz with a typical gain of 16dB. This component offers 500W maximum power dissipation and 300W output power, suitable for demanding applications. Designed for screw mounting in a 5-pin M-244 case, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency175MHz
PackageM
Voltage Rating125V
Current Rating40A
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Technical Specifications
Stmicroelectronics SD2932W technical specifications.
General
| Package/Case | M |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 125V |
| Drain to Source Voltage (Vdss) | 125V |
| DS Breakdown Voltage-Min | 125V |
| Frequency | 175MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 300W |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 125V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics SD2932W Datasheet
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