NPN silicon bipolar junction transistor in a TO-247 package, featuring a 15A continuous collector current and 60V collector-emitter breakdown voltage. This through-hole mounted component offers a maximum power dissipation of 90W and a gain bandwidth product of 3MHz. It operates across a temperature range of -65°C to 150°C and is RoHS compliant.
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Stmicroelectronics TIP3055 technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 20.15mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 15A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 300 |
| Packaging | Rail/Tube |
| Polarity | NPN, PNP |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 5.15mm |
| RoHS | Compliant |
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