High-performance MOSFET gate driver featuring a half-bridge configuration. Delivers 2A high and low level output current with a 20V output voltage. Operates within a 4.5V to 5.5V supply voltage range, exhibiting a typical operating supply current of 7mA. Packaged in a 16-pin SOIC surface mount format, suitable for operation between -40°C and 150°C. Fall time is rated at 50ns, with a maximum power dissipation of 700mW.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Infineon 1ED020I12B2XUMA1 technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 50ns |
| High Level Output Current | 2A |
| Low Level Output Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 2A |
| Max Power Dissipation | 700mW |
| Max Supply Current | 400uA |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Operating Supply Current | 7mA |
| Output Current | 2A |
| Output Voltage | 20V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | EiceDriver™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon 1ED020I12B2XUMA1 Datasheet
Download the complete datasheet for Infineon 1ED020I12B2XUMA1 to view detailed technical specifications.
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