High-performance MOSFET gate driver featuring a half-bridge configuration. Delivers 2A high and low level output current with a 20V output voltage. Operates within a 4.5V to 5.5V supply voltage range, exhibiting a typical operating supply current of 7mA. Packaged in a 16-pin SOIC surface mount format, suitable for operation between -40°C and 150°C. Fall time is rated at 50ns, with a maximum power dissipation of 700mW.
Infineon 1ED020I12B2XUMA1 technical specifications.
Download the complete datasheet for Infineon 1ED020I12B2XUMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.