This device is a single-channel galvanically isolated gate driver based on a coreless transformer architecture. It is intended for 600 V, 650 V, 1200 V, 1700 V, and 2300 V IGBTs as well as Si and SiC MOSFETs. The driver supports 3.3 V and 5 V input supply rails, provides typical peak output currents of 6 A source and 6.5 A sink, and achieves 40 ns typical propagation delay with common-mode transient immunity greater than 300 kV/µs. The 1ED3142 variant uses a PG-LDSO-8-1 wide-body package and has an output-side UVLO threshold of 14 V typical on and 12.55 V typical off.
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| Channels | 1 |
| Isolation architecture | Coreless transformer based galvanic isolation |
| Supported switch voltage classes | 600, 650, 1200, 1700, 2300V |
| Supported switch types | IGBT, Si MOSFET, SiC MOSFET |
| Peak source current | 6A |
| Peak sink current | 6.5A |
| Propagation delay | 40 typns |
| Common-mode transient immunity | >300kV/µs |
| Input supply voltage | 3.3, 5V |
| Output supply absolute maximum | 35V |
| Output UVLO threshold on | 14 typV |
| Output UVLO threshold off | 12.55 typV |
| Ambient operating temperature | -40 to 125°C |
| Junction temperature | -40 to 150°C |
| Isolation voltage | 5.7 for 1 minkVrms |
| Working isolation voltage | 1767 VIORMV |
These are design resources that include the Infineon 1ED3142MC12H
User manual for the Eval-1ED3145MC12H-SiC evaluation board, designed to evaluate the EiceDRIVER 1ED3145MC12H gate driver IC family with CoolSiC MOSFETs.
