This device is a single-channel high-side isolated gate driver for IGBTs, silicon MOSFETs, and SiC switches in applications up to 2300 V. It provides reinforced galvanic isolation, 6.5 A sink current, 6 A source current, and 40 ns typical propagation delay. The input supply range is 3 V to 15 V, and the output stage supports up to 35 V absolute maximum supply voltage with adjustable UVLO. The device is offered in a PG-LDSO-8 package and is qualified for industrial use. Protection and isolation features include active shutdown, short-circuit clamping, overtemperature protection, high CMTI above 300 kV/µs, and 5.7 kV RMS isolation for 1 minute.
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| Channels | 1 |
| Configuration | High-side |
| Input VCC range | 3 to 15V |
| Isolation type | Galvanic isolation - Reinforced |
| Output current (sink) | 6.5A |
| Output current (source) | 6A |
| Power dissipation | 550mW |
| Qualification | Industrial |
| RDS(on) high-side max | 2.1Ω |
| RDS(on) high-side typ | 0.9Ω |
| RDS(on) low-side max | 1.1Ω |
| RDS(on) low-side typ | 0.5Ω |
| Thermal resistance junction-to-ambient | 113K/W |
| Turn-off propagation delay | 40ns |
| Turn-on propagation delay | 40ns |
| VBS UVLO on threshold | 2V |
| VBS UVLO off threshold | 1.84V |
| Voltage class | 2300V |
| Output supply voltage abs max | 35V |
| CMTI | >300kV/µs |
| Part-to-part propagation delay skew max | 7ns |
| Creepage and clearance | 8mm |
| VIORM reinforced isolation | 1767V peak |
| VISO isolation for 1 second | 6.84kV RMS |
| VISO isolation for 1 minute | 5.7kV RMS |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
These are design resources that include the Infineon 1ED3145MC12H
User manual for the Eval-1ED3145MC12H-SiC evaluation board, designed to evaluate the EiceDRIVER 1ED3145MC12H gate driver IC family with CoolSiC MOSFETs.
