This device is a 650 V high-side and low-side gate driver for MOSFET and IGBT half-bridge stages. It provides 0.29 A source current and 0.7 A sink current, integrates a bootstrap diode, and operates from a 10 V to 20 V VCC supply. The driver uses functional level-shift SOI isolation, supports two output channels, and is qualified for industrial applications. Typical turn-on and turn-off propagation delays are both 200 ns, with VBS UVLO thresholds of 8.2 V on and 7.2 V off and VCC UVLO thresholds of 9.1 V on and 8.2 V off. The product is offered in a PG-DSO-14 package with a standard packing size of 2500 units.
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| Channels | 2 |
| Configuration | High-side and low-side |
| Input VCC range | 10 to 20V |
| Isolation type | Functional levelshift SOI (Silicon On Insulator) |
| Output current (sink) | 0.7A |
| Output current (source) | 0.29A |
| Qualification | Industrial |
| Turn-off propagation delay | 200ns |
| Turn-on propagation delay | 200ns |
| VBS UVLO off threshold | 7.2V |
| VBS UVLO on threshold | 8.2V |
| VCC UVLO off threshold | 8.2V |
| VCC UVLO on threshold | 9.1V |
| Voltage class | 650V |
| Orderable part number | 2ED21064S06JXUMA1 |
| Packing type | TAPE & REEL |
| Moisture sensitivity level | 3 |
| Halogen free | Yes |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
