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2ED300C17-ST Datasheet | Insulated Gate Bipolar Transistors (IGBT) | Infineon

2ED300C17-ST

2ED300C17-ST

HV Gate Driver Boards (EiceDRIVER); Package: E-EUPEC-0; Technology: Transformer; Channels: 2.0; Topology: Half Bridge; V: 1,700.0 V; Io<sub>+/-</sub>: 30,000.0 mA

Semiconductors
Discrete Semiconductors

Semiconductors
Discrete Semiconductors
Transistors
Insulated Gate Bipolar Transistors (IGBT)

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Technical Specifications

Infineon 2ED300C17-ST technical specifications.

Compliance

RoHS	Yes
Lead Free	No
REACH	Compliant
Military Spec	False

Datasheet

Infineon 2ED300C17-ST Datasheet

Download the complete datasheet for Infineon 2ED300C17-ST to view detailed technical specifications.

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