This device is a 600 V half-bridge gate driver IC for IGBTs with high-side and low-side outputs. It uses Infineon's LS-SOI level-shift technology and integrates an ultra-fast bootstrap diode for the high-side supply path. The driver provides 0.36 A source current and 0.7 A sink current, with typical turn-on and turn-off propagation delays of 420 ns and 400 ns. Undervoltage lockout is implemented on both VBS and VCC, with industrial qualification and specified operation from 13 V to 17.5 V supply. The recommended orderable part is supplied in a PG-DSO-8 package with tape-and-reel packing.
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Infineon 2EDL05I06BF technical specifications.
| Channels | 2 |
| Configuration | High-side and low-side |
| Supply voltage range | 13 to 17.5V |
| Isolation type | Functional levelshift SOI (Silicon On Insulator) |
| Output current (sink) | 0.7A |
| Output current (source) | 0.36A |
| Qualification | Industrial |
| Turn-off propagation delay | 400ns |
| Turn-on propagation delay | 420ns |
| VBS UVLO on threshold | 11.6V |
| VBS UVLO off threshold | 10.7V |
| VCC UVLO on threshold | 12.5V |
| VCC UVLO off threshold | 11.6V |
| Voltage class | 600V |
| Package | PG-DSO-8 |
| Packing type | TAPE & REEL |
| Packing size | 2500 |
| Moisture sensitivity level | 3 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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