This 600 V half-bridge gate driver IC uses LS-SOI level-shift technology to control MOS transistors in high-side and low-side configurations. It provides two channels, operates from a 10 V to 17.5 V VCC range, and delivers 0.36 A source and 0.7 A sink output current. Typical propagation delays are 310 ns for turn-on and 300 ns for turn-off, with VBS and VCC UVLO thresholds of 9.1 V on and 8.3 V off. The device is qualified for industrial use and integrates an ultra-fast bootstrap diode, input clamp diodes, offline gate clamping, and undervoltage detection filtering.
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Infineon 2EDL05N06PF technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC Range | 10 to 17.5V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Sink) | 0.7A |
| Output Current (Source) | 0.36A |
| Turn Off Propagation Delay | 300ns |
| Turn On Propagation Delay | 310ns |
| VBS UVLO (On) | 9.1V |
| VBS UVLO (Off) | 8.3V |
| VCC UVLO (On) | 9.1V |
| VCC UVLO (Off) | 8.3V |
| Voltage Class | 600V |
| Qualification | Industrial |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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