This device is a 600 V half-bridge gate driver IC with two channels and an integrated bootstrap diode. It operates from a 10 V to 17.5 V VCC supply range and uses functional level-shift SOI isolation technology. The driver provides 0.36 A source current and 0.7 A sink current, with typical turn-on and turn-off propagation delays of 310 ns and 300 ns. It includes asymmetric undervoltage lockout thresholds on both VBS and VCC and is qualified for industrial applications. The device is supplied in a PG-DSO-14 package and is offered in tape-and-reel packaging.
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Infineon 2EDL05N06PJ technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC range | 10 to 17.5V |
| Isolation type | Functional levelshift SOI (Silicon On Insulator) |
| Output current (sink) | 0.7A |
| Output current (source) | 0.36A |
| Qualification | Industrial |
| Turn-off propagation delay | 300ns |
| Turn-on propagation delay | 310ns |
| VBS UVLO on threshold | 9.1V |
| VBS UVLO off threshold | 8.3V |
| VCC UVLO on threshold | 9.1V |
| VCC UVLO off threshold | 8.3V |
| Voltage class | 600V |
| Infineon package | PG-DSO-14 |
| Packing type | TAPE & REEL |
| Moisture sensitivity level | 3 |
| Halogen free | Yes |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon 2EDL05N06PJ to view detailed technical specifications.
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