N-channel Power MOSFET, Si, HEXFET technology, 250V drain-source voltage, 9.3A continuous drain current. Features a DPAK (TO-252AA) surface-mount package with 3 gull-wing leads and a tab. Maximum power dissipation of 100W, operating temperature range of -55°C to 175°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon AUIRFR4292 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.39(Max)
Seated Plane Height (mm)
2.52(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
250V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
9.3A
Material
Si
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
345@10VmOhm
Typical Gate Charge @ Vgs
13@10VnC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
705@25VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon AUIRFR4292 Datasheet
Download the complete datasheet for Infineon AUIRFR4292 to view detailed technical specifications.
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