N-channel Power MOSFET, Si, 250V Drain-Source Voltage, 9.3A Continuous Drain Current, 3-pin IPAK package (TO-251AA) with through-hole mounting. Features HEXFET process technology, 345 mOhm max Drain-Source Resistance at 10V, and a wide operating temperature range of -55°C to 175°C. Ideal for automotive applications.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Infineon AUIRFU4292 technical specifications.
General
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 9.78(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9.3A |
| Material | Si |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 345@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 705@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon AUIRFU4292 Datasheet
Download the complete datasheet for Infineon AUIRFU4292 to view detailed technical specifications.
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