This device is a dual silicon Schottky diode intended for general-purpose high-speed switching, circuit protection, voltage clamping, and high-level detecting and mixing. The BAS40-04 variant is provided in a SOT-23 package with a 40 V reverse voltage rating and 120 mA forward current rating. At 25°C, it specifies low forward voltage with typical values of 310 mV at 1 mA and 450 mV at 10 mA, along with low diode capacitance of 3 pF typical at 1 MHz. The part supports operation from -55°C to 150°C junction temperature and is rated for 250 mW total power dissipation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BAS40-04 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT |
| Element Configuration | Dual |
| Forward Current | 120mA |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon BAS40-04 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
