This silicon Schottky diode is intended for general-purpose high-speed switching, circuit protection, voltage clamping, and high-level detecting and mixing. It supports a 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation. The device operates over a -55 °C to 150 °C temperature range and is housed in a SOT-23 package variant identified as R-PDSO-G3. At 25 °C it provides 1.6 pF typical diode capacitance, 375 mV typical forward voltage at 1 mA, and 100 ps maximum charge carrier life time.
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Infineon BAS70-04 technical specifications.
| Package/Case | SOT |
| Element Configuration | Dual |
| Forward Current | 70mA |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Voltage | 70V |
| RoHS | Compliant |
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