This silicon rectifier diode features a maximum operating temperature of 150 degrees Celsius, with a maximum reverse voltage of 80 volts and a maximum power dissipation of 0.25 watts. It has a dual terminal position and a pin count of 3, with 2 diode elements. The device is packaged in a 3-pin R-PDSO-G3 package type.
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Technical Specifications
Infineon BAW56WE6327 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 80 |
| Power Dissipation-Max | 0.25 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BAW56WE6327 Datasheet
Download the complete datasheet for Infineon BAW56WE6327 to view detailed technical specifications.
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