The Infineon BC808-25E6433 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 500mA. It features a gain bandwidth product of 200MHz and a maximum power dissipation of 330mW. The transistor is packaged in a surface mount SOT-23-3 package and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -25V |
| RoHS | Compliant |
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