The Infineon BC808-40B6327 is a PNP bipolar junction transistor packaged in a surface-mount SOT-23-3 package. It can withstand a collector-emitter voltage of up to 25V and a collector current of up to 500mA. The transistor has a maximum power dissipation of 330mW and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and available in tape and reel packaging.
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Infineon BC808-40B6327 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 30000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
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