The BC808-40WE6327 is a PNP bipolar junction transistor from Infineon. It has a collector-emitter breakdown voltage of 25V and a maximum collector current of 500mA. The device is packaged in a surface-mount SOT-323-3 package and is rated for operation between -65°C and 150°C. The transistor is lead-free and has a maximum power dissipation of 250mW.
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| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
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