This device is an NPN silicon small-signal transistor intended for general AF applications. It is rated for 45 V collector-emitter voltage, 50 V collector-base voltage, and 500 mA DC collector current in a SOT-23 package. The BC817-16 gain group specifies DC current gain from 100 to 250 at 100 mA and from 60 to 160 at 300 mA under the stated test conditions. It supports 330 mW total power dissipation at a 79 °C soldering point, a maximum junction temperature of 150 °C, and a typical transition frequency of 170 MHz.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BC817-16 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BC817-16 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
