
The Infineon BC817-40E6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA. It has a gain bandwidth product of 170MHz and a maximum operating temperature of 150°C. The transistor is packaged in a TO-236-3 package and is lead free and RoHS compliant.
Sign in to ask questions about the Infineon BC817-40E6327 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BC817-40E6327 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 170MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BC817-40E6327 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
