NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a maximum power dissipation of 500mW and a transition frequency of 170MHz. Packaged in a SOT case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency170MHz
PackageSOT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BC817K25E6327HTSA1 technical specifications.
General
Package/Case
SOT
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
700mV
Collector-emitter Voltage-Max
700mV
Continuous Collector Current
500mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5V
Frequency
170MHz
Halogen Free
Not Halogen Free
Height
900um
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
170MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
170MHz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BC817K25E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BC817K25E6327HTSA1 to view detailed technical specifications.
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