Infineon
BC847PNH6327XT
For AF input stage and driver applicationsHigh current gainLow collector-emitter saturation voltageTwo (galvanic) internal isolated NPN/PNP transistor in one packagePb-free (RoHS compliant) packageQualified according AEC Q101
For AF input stage and driver applicationsHigh current gainLow collector-emitter saturation voltageTwo (galvanic) internal isolated NPN/PNP transistor in one packagePb-free (RoHS compliant) packageQualified according AEC Q101
PackageSOT-363
MountingSurface Mount
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Technical Specifications
Infineon BC847PNH6327XT technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Contact Plating | Tin, Matte |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC847PNH6327XT Datasheet
Download the complete datasheet for Infineon BC847PNH6327XT to view detailed technical specifications.
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