The BC857S is a PNP bipolar junction transistor with a collector base voltage of 50V and a collector emitter saturation voltage of 650mV. It has a maximum collector current of 100mA and a maximum frequency of 250MHz. The transistor is packaged in a small outline package and is RoHS compliant. It is suitable for use in applications where a high current gain is required, such as in audio amplifiers and switching circuits. The BC857S can operate at a maximum temperature of 150°C and has a maximum power dissipation of 250mW.
Frequency250MHz
PackageSOT
Voltage65V
PolarityPNP
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Technical Specifications
Infineon BC857S technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 200 |
| Length | 2mm |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Voltage | 65V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BC857S Datasheet
Download the complete datasheet for Infineon BC857S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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