The BC858BL3E6327 is a PNP transistor with a collector base voltage of 30V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates within a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236-3 surface mount package and is RoHS compliant.
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Infineon BC858BL3E6327 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 250MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
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