The BCP5516E6327HTSA1 is a surface mount NPN bipolar junction transistor with a maximum collector-emitter voltage of 60V and a maximum DC collector current of 1A. It features a maximum power dissipation of 2000mW and a minimum DC current gain of 25 at various operating conditions. The transistor is packaged in a SOT-223 package and has a maximum operating temperature range of -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BCP5516E6327HTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | 25@5mA@2V|100@150mA@2V|25@500mA@2V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BCP5516E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCP5516E6327HTSA1 to view detailed technical specifications.
No datasheet is available for this part.