The BCP56-10H6433 is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 100nA. It features a maximum power dissipation of 2W and a transition frequency of 100MHz. The transistor is packaged in a TO-261-4 case and is available in quantities of 4000 on tape and reel. It is suitable for surface mount applications and has a maximum collector-emitter voltage of 500mV.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BCP56-10H6433 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 100nA |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCP56-10H6433 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
