The BCP68-25H6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 20V and a maximum collector current of 100nA. It is packaged in a TO-261-4 case and is available in quantities of 1000 on tape and reel. The transistor is RoHS compliant and has a transition frequency of 100MHz. It is suitable for use in a variety of applications, including those requiring high power dissipation of up to 3W.
Infineon BCP68-25H6327 technical specifications.
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 100nA |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCP68-25H6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.