The BCR08PN is a bipolar junction transistor from Infineon with a collector emitter saturation voltage of 300mV and a collector emitter voltage of 50V. It has a maximum collector current of 100mA and a maximum power dissipation of 250mW. The transistor is packaged in a small outline SOT package and is available on a tape and reel. It is halogen free and RoHS compliant. The transistor has a minimum current gain of 70 and can operate at a maximum temperature of 150°C.
PackageSOT
PolarityNPN, PNP
Power250mW
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Technical Specifications
Infineon BCR08PN technical specifications.
General
| Package/Case | SOT |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 70 |
| Length | 2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR08PN Datasheet
Download the complete datasheet for Infineon BCR08PN to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.