Infineon
BCR112WH6327XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
PackageSOT-323-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCR112WH6327XTSA1 technical specifications.
General
Package/Case
SOT-323-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
Yes
Transition Frequency
140MHz
Compliance
RoHS
Compliant
Datasheet
Infineon BCR112WH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BCR112WH6327XTSA1 to view detailed technical specifications.
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