The BCR116E6433HTMA1 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and is packaged in a TO-236-3 case. The transistor is lead free and RoHS compliant, making it suitable for use in a variety of applications. It is rated for operation over a temperature range of -40°C to 150°C.
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Infineon BCR116E6433HTMA1 technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 100mA |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
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