NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current (IC). Operates within a temperature range of -65°C to 150°C with a 250mW power dissipation. Packaged in a compact SOT-323 surface-mount case, this 3-pin component offers a minimum hFE of 120 and a transition frequency of 150MHz. RoHS and Halogen Free compliant.
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Infineon BCR119WH6327XTSA1 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 120 |
| Input Resistance | 4.7kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.25mm |
| RoHS | Compliant |
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