NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current (IC). Operates within a temperature range of -65°C to 150°C with a 250mW power dissipation. Packaged in a compact SOT-323 surface-mount case, this 3-pin component offers a minimum hFE of 120 and a transition frequency of 150MHz. RoHS and Halogen Free compliant.
PackageSOT-323
MountingSurface Mount
PolarityNPN
Power250mW
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Technical Specifications
Infineon BCR119WH6327XTSA1 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Emitter Base Voltage (VEBO)
5V
Halogen Free
Halogen Free
Height
0.8mm
hFE Min
120
Input Resistance
4.7kR
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
250mW
RoHS Compliant
Yes
Transition Frequency
150MHz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCR119WH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BCR119WH6327XTSA1 to view detailed technical specifications.
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