
NPN Bipolar Junction Transistor (BJT) in a SOT-363-6 surface mount package. Features a maximum collector current of 100mA, collector-emitter breakdown voltage of 50V, and a transition frequency of 150MHz. Offers a minimum hFE of 70 and a maximum power dissipation of 250mW. Operates across a temperature range of -65°C to 150°C. This component is RoHS compliant, lead-free, and halogen-free with tin matte contact plating.
Infineon BCR135SH6327XTSA1 technical specifications.
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 6V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Halogen Free | Halogen Free |
| Height | 800um |
| hFE Min | 70 |
| Input Resistance | 10kR |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCR135SH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
