NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 300mV collector-emitter saturation voltage and 150MHz transition frequency. Packaged in a SOT-23 surface mount case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
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Infineon BCR142E6327HTSA1 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin |
| Current Rating | 100mA |
| Halogen Free | Not Halogen Free |
| hFE Min | 70 |
| Input Resistance | 22kR |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
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