The BCR166WH6327XTSA1 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a SOT-323-3 package and is suitable for operating temperatures between -65°C and 150°C. The transistor has a maximum power dissipation of 250mW and is RoHS compliant.
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Infineon BCR166WH6327XTSA1 technical specifications.
| Package/Case | SOT-323-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| Width | 1.25mm |
| RoHS | Compliant |
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